Original price was: ₹120.00.₹70.00Current price is: ₹70.00.
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FEATURES
Metal-Semiconductor junction on with guard ring.
Epitaxial construction on Low forward voltage drop High current capability.
2N5551 NPN Amplifier Transistor
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1.Base Current(IB) is 120mA
2.Collector-Emitter voltage (VCE) is 160 V
3.Collector-Base voltage (VCB) is 180V
4.Emitter Base Voltage (VBE) is 6V
2N3906 Transistor
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1.Bi-Polar, High Voltage PNP Transistor.
2.DC Current Gain (hFE) is 300.
3.Continuous Collector current (IC) is 200mA.
A1015 PNP Transistor
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1.Power Dissipation: 0.4watts.
2.High voltage and High current: Vceo = 50v and Ic = 150mA
3.Low Noise: 1dB.
4.Case Material: molded plastic.
5.Collector power dissipation: 400mW.
6.DC current gain: 400.
KSP2222A NPN Transistor
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1.Bi-Polar high current NPN Transistor.
2.DC Current Gain (hFE) is 100 to 300.
3.Continuous Collector current (IC) is 600mA.
2N3904 Transistor
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1.Bi-Polar NPN Transistor.
2.DC Current Gain (hFE) is 300 maximum.
3.Continuous Collector current (IC) is 200mA
KSA1220 PNP Transistor Amplifier
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1.High Frequency PNP Transistor.
2.DC Current Gain (hFE), typically 150.
3.Transition Frequency is 175 MHz.
4.Continuous Collector current (IC) is 1.2A.
2N4401 NPN Transistor
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1.General purpose NPN Transistor.
2.High DC Current Gain (hFE), typically 80 when IC=10mA.
3.Continuous Collector current (IC) is 500mA.
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