Nex Electronic: Simple Solution For Complex Connections

Drain to source voltage Vds is 100V
Gate to source voltage is ?20V
On Resistance Rds(on) of 44mohm at Vgs of 10V
Power dissipation Pd of 130W at 25?C
Features:
Gate to source voltage is ?20V
On-Resistance Rds(on) of 8mohm at Vgs of 10V
Power dissipation (Pd) of 130W at 25?C
Continuous drain current (Id) of 110A at Vgs 10V and 25?C
Operating junction temperature range from -55?C to 175?C
Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.

Nex Electronic: Simple Solution For Complex Connections

Drain to source voltage Vds is 100V
Gate to source voltage is ?20V
On Resistance Rds(on) of 44mohm at Vgs of 10V
Power dissipation Pd of 130W at 25?C
Features:
Gate to source voltage is ?20V
On-Resistance Rds(on) of 8mohm at Vgs of 10V
Power dissipation (Pd) of 130W at 25?C
Continuous drain current (Id) of 110A at Vgs 10V and 25?C
Operating junction temperature range from -55?C to 175?C
Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.

Nex Electronic: Simple Solution For Complex Connections
QUICK VIEW:

IRF3710 MOSFET

Type of Transistor: MOSFET
Type Designator: IRF3710
Type of Control Channel: N -Channel
Maximum Drain-Source Voltage: 100 V
Maximum Gate-Source Voltage: 10 V
Maximum Drain Current: 57 A
Maximum Operating Junction Temperature: 150 ?C
Maximum Drain-Source On-State Resistance: 0.025 Ohm
Total Gate Charge: 86.7 nC
Maximum Power Dissipation: 200 W
Package: TO220AB

IRF540N MOSFET
Quick View:
1.Small signal N-Channel MOSFET.
2.Continuous Drain Current (ID) is 33A at 25?C.
3.Pulsed Drain Current (ID-peak) is 110A.
4.Turn ON and Turn off time is 35ns each.

IRF540N MOSFET
Quick View:
1.Small signal N-Channel MOSFET.
2.Continuous Drain Current (ID) is 33A at 25?C.
3.Pulsed Drain Current (ID-peak) is 110A.
4.Turn ON and Turn off time is 35ns each.

Nex Electronic: Simple Solution For Complex Connections
QUICK VIEW:
Detailed Specifications:-
Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 200V
Continuous Drain Current (Id) 18A
Drain-Source Resistance (Rds On) 0.15Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 70 nC
Operating Temperature Range -55 – 150?C
Power Dissipation (Pd) 150W

Nex Electronic: Simple Solution For Complex Connections
QUICK VIEW:
IRFB7545 MOSFET

Type of Transistor: MOSFET
Type Designator: IRFB7545
Type of Control Channel: N -Channel
Maximum Drain-Source Voltage: 60 V
Maximum Gate-Source Voltage: 20 V
Maximum Gate-Threshold Voltage: 3.7 V
Maximum Drain Current: 95 A
Drain-Source Capacitance: 370 pF
Maximum Operating Junction Temperature: 175 ?C
Rise Time: 72 nS
Maximum Drain-Source On-State Resistance: 0.0059 Ohm
Maximum Power Dissipation: 125 W
Package: TO220AB

Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters